Open AccessScaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application
Author(s) -
Yadav Manoj,
Velampati Ravi Shankar R.,
Mandal Debaprasad
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2019.0148
Subject(s) - materials science , fabrication , non volatile memory , optoelectronics , quantum dot , wafer , capacitance , nanotechnology , voltage , electrode , electrical engineering , chemistry , medicine , alternative medicine , pathology , engineering
The present work details the synthesis of cobalt quantum‐dots (Co QDs) with size downscaling to 1–2 nm and their applications in non‐volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled‐down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin‐coated over silicon dioxide wafer for the fabrication of floating‐gate NVM devices. Capacitance–voltage ( C – V ) and capacitance–time ( C – t ) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2–4 V lead to a flat band voltage shift of 0.35–1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C – V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.