Open AccessSi/SiC heterojunction lateral double‐diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology
Author(s) -
Duan Baoxing,
Huang Yunjia,
Xing Jingyu,
Yang Yintang
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2019.0055
Subject(s) - ldmos , materials science , silicon carbide , breakdown voltage , optoelectronics , field effect transistor , heterojunction , transistor , silicon , semiconductor , electric field , mosfet , figure of merit , voltage , electrical engineering , composite material , engineering , physics , quantum mechanics
A novel silicon (Si) on silicon carbide (SiC) lateral double‐diffused metal oxide semiconductor field effect transistor with deep drain region is proposed. Its main idea is transferring the breakdown point and utilising the high critical electric field of SiC material to suppress the curvature effect of the drain, which eventually alleviates the trade‐off relationship between breakdown voltage (BV) and specific on‐resistance ( R on,sp ). Through the TCAD simulation, the results show that the BV is significantly improved from 240 V for conventional Si lateral double‐diffused metal oxide semiconductor (LDMOS) to 384 V for the proposed structure with the drift region length of 20 μm, increased by 60%. The figure‐of‐merit of the conventional Si LDMOS and the Si/SiC LDMOS are 2.04 and 4.26 MW/cm 2 , respectively. It indicates that the proposed structure has better performance than the Si counterpart. The influences of design parameters and interfacial charges on the device performance are also discussed in this work.