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Tight‐binding model for the electronic properties of buckled triangular borophene
Author(s) -
Horri Ashkan,
Faez Rahim
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2019.0023
Subject(s) - borophene , tight binding , materials science , electronic structure , nanotechnology , condensed matter physics , physics , graphene
In this work, the authors present a tight‐binding (TB) model for describing the electronic properties of buckled triangular Borophene. This TB model is constructed using three orbitals for each boron atom. The Slater–Koster approach is applied to calculate TB Hamiltonian. Parameters of the TB model are fitted from the first‐principle energy band results. When only nearest‐neighbour hoppings are included, this TB model is sufficient to capture the bands around high‐symmetry k ‐points.

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