Open AccessThin‐film transistors based on wide bandgap Ga 2 O 3 films grown by aqueous‐solution spin‐coating method
Author(s) -
Chen Dazheng,
Xu Yu,
An Zhiyuan,
Li Zhe,
Zhang Chunfu
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5825
Subject(s) - materials science , band gap , spin coating , optoelectronics , wide bandgap semiconductor , thin film , molecular beam epitaxy , semiconductor , annealing (glass) , thin film transistor , chemical vapor deposition , nanotechnology , epitaxy , layer (electronics) , composite material
Ga 2 O 3 is a wide bandgap oxide semiconductor material with the bandgap value only second in magnitude to diamond among known semiconductors. As a wide‐bandgap semiconductor, Ga 2 O 3 has emerged as a new competitor to silicon carbide and III‐nitrides in various applications of ultraviolet optoelectronics and high power electronics. However, almost all the devices are based on the Ga 2 O 3 grown by molecular‐beam epitaxy or chemical vapour deposition, which is time‐consuming and expensive. In this work, the authors report on thin‐film transistors based on wide bandgap Ga 2 O 3 films grown by aqueous‐solution spin‐coating method. The morphological, optical and electrical properties of the films and devices are investigated using a range of characterisation techniques, whilst the effects of post‐deposition annealing are also investigated. Both as fabricated and post‐annealed Ga 2 O 3 films are found to be very smooth and exhibit wide energy bandgaps of around 4.8 and 4.9 eV, respectively. Thin‐film transistors based on the grown Ga 2 O 3 films show n‐type conductivity with the maximum electron mobility of 0.1 cm 2 /Vs.