Open AccessConduction mechanisms in metal/self‐assembled monolayer/metal junctions
Author(s) -
Etor David,
Dodd Linzi E.,
Balocco Claudio,
Wood David
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5747
Subject(s) - quantum tunnelling , monolayer , thermal conduction , metal , metal insulator metal , condensed matter physics , materials science , insulator (electricity) , schottky diode , formalism (music) , schottky effect , self consistent , tunnel effect , schottky barrier , chemical physics , nanotechnology , chemistry , optoelectronics , physics , quantum mechanics , capacitor , composite material , art , musical , quantum electrodynamics , visual arts , voltage , diode , metallurgy
The conduction mechanisms in metal–insulator–metal junctions where the insulator consists of a self‐assembled monolayer are investigated. Temperature dependence measurements from 2.5 to 300 K, show that the conduction is dominated by tunnelling only for temperatures below 20 K, while at higher temperatures surface‐limited and bulk‐limited mechanisms are observed. The experimental results are explained using a combination of direct (Simmons) tunnelling, Schottky emission, and Poole–Frenkel theory. Further insight is gained through numerical simulations based on the non‐equilibrium Green‐function formalism.