Open AccessEnhanced n‐type conductivity of 6H‐SiC nanowires by nitrogen doping
Author(s) -
Li Shanying,
Li Jie,
Su Qing,
Liu Xiangyun,
Zhao Haipeng,
Ding Mingjie
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5714
Subject(s) - materials science , dopant , nanowire , doping , silicon carbide , field electron emission , electrical resistivity and conductivity , nanoelectronics , wide bandgap semiconductor , conductivity , electric field , nanotechnology , semiconductor , optoelectronics , composite material , electrical engineering , electron , chemistry , physics , engineering , quantum mechanics
The N‐doped n‐type 6H‐SiC (silicon carbide) nanowires (NWs) were synthesised via an electrospinning fibre carbothermal method by employing ammonia as a dopant. The structure characterisations reveal that the as‐synthesised 6H‐SiC NWs have a hexagonal structure. The nano‐field‐effect transistors based on individual N‐doped 6H‐SiC NWs were constructed, and the electrical measurements indicated that the N‐doped 6H‐SiC NWs have n‐type semiconductors properties with a high carrier concentration of 2.1 × 10 19 cm −3 and a low resistivity of 0.1 Ω cm. The field emission characterisations of N‐doped 6H‐SiC NWs demonstrate that the turn‐on electric field ( E to ) is 7.6 Vμm −1 , and the threshold electric field ( E th ) is 8.5 Vμm −1 . The as‐synthesised N‐doped 6H‐SiC NWs with enhanced n‐type conductivity will be a very attractive candidate for nanoelectronics devices in the future.