Open AccessEffect of high‐temperature AlN buffer on anisotropy of semi‐polar (11‐22) GaN with two pressure growth stages
Author(s) -
Han Jun,
Shi Fengfeng,
Xing Yanhui,
Wan Peiyuan,
Gao Zhiyuan,
Hu Xiaoling,
Li Tao,
Cao Shiwei,
Zhang Yao
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5669
Subject(s) - materials science , sapphire , epitaxy , buffer (optical fiber) , metalorganic vapour phase epitaxy , chemical vapor deposition , wide bandgap semiconductor , diffraction , layer (electronics) , optoelectronics , analytical chemistry (journal) , composite material , optics , chemistry , telecommunications , laser , physics , chromatography , computer science
The low‐temperature GaN (LT‐GaN) and high‐temperature AlN (HT‐AlN) buffer layers were grown on m ‐plane sapphire by metal–organic chemical vapour deposition. The following semi‐polar (11‐22) GaN thin films were deposited under high‐ and low‐pressure growth stages. Anisotropy of (11‐22) GaN grown on HT‐AlN buffer along two in‐planar directions ([11‐2‐3] and [‐1100]) were clearly suppressed, the maximum variation of the X‐ray rocking curve full width at half maximum of (11‐22) GaN on LT‐GaN buffer was 0.2498°, that of (11‐22) GaN on HT‐AlN buffer was 0.0488°. The X‐ray diffraction results of on‐axis and off‐axis both indicated that the crystal quality of the epitaxial GaN layer with HT‐AlN buffer was obviously improved, and surface morphology was much smoother.