Open AccessInfluences of Nd doping on preparing Mg 2 Si semiconductor thin films by thermal evaporation
Author(s) -
Yu Hong,
Luo Yuee,
Wang Xuewen,
He Yi,
Xu Lin,
Sun Liping,
Liao Lijun,
Deng Rui
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5593
Subject(s) - raman spectroscopy , dopant , materials science , scanning electron microscope , doping , thin film , analytical chemistry (journal) , lattice constant , semiconductor , substrate (aquarium) , diffraction , nanotechnology , optics , optoelectronics , chemistry , composite material , physics , oceanography , chromatography , geology
In this work, the thermal evaporation method was adopted to prepare Nd‐doped Mg 2 Si semiconductor thin films on n‐Si(111) substrate. The structure, morphology and optical properties of these Mg 2 Si thin films doped with Nd were studied by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and Raman spectroscopy (RAMAN). The XRD results showed that Nd dopant led to weakened Mg 2 Si diffraction peaks and bigger lattice constants. The scanning electron microscopy results indicated decreased size of Mg 2 Si grains and clusters formed by the grains because of Nd dopant. The RAMAN results showed that the intensity of the characteristic peaks near 256 and 690 cm −1 decreased due to the influence of Nd doping.