Open AccessInvestigation of RF and linearity performance of electrode work‐function engineered HDB vertical TFET
Author(s) -
Narwal Seema,
Chauhan Sudakar Singh
Publication year - 2019
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5307
Subject(s) - transconductance , linearity , materials science , radio frequency , optoelectronics , dielectric , microwave , transistor , electrical engineering , bandwidth (computing) , gain compression , electronic engineering , cmos , engineering , telecommunications , voltage , amplifier
This work realises a hetero‐dielectric buried oxide vertical tunnel field effect transistor (HDB VTFET) and investigates its radio frequency (RF) and linearity characteristics. First time, the concept of hetero‐dielectric buried oxide (BOX) in VTFET is used to obtain the superior improvement in terms of different RF and linearity figure of merits such as C g s , C g d , C g g , f T , Gain Bandwidth Product (GBP), τ , Transconductance Frequency Product (TFP), Transconductance Generation Factor (TGF), g m 2 , g m 3 , VI P 2 , VI P 3 , II P 3 , IM D 3 and 1‐dB compression point. Also, the influence of HfO 2 BOX length scaling on these FOMs is analysed. The results reveal that the HDB VTFET can be a promising contender to replace bulk metal‐oxide semiconductor field‐effect transistors in analogue/mixed signal system‐on‐chip and high‐frequency microwave applications and the accuracy of this device is validated by TCAD Sentaurus simulator.