Open AccessGaN LEDs fabricated using SF 6 plasma RIE
Author(s) -
Khan Wasif,
Bi Xiaopeng,
Fan Bin,
Li Wen
Publication year - 2018
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2018.5083
Subject(s) - materials science , light emitting diode , optoelectronics , fabrication , gallium nitride , reactive ion etching , annealing (glass) , plasma etching , plasma , etching (microfabrication) , diode , surface roughness , nitride , wide bandgap semiconductor , nanotechnology , composite material , medicine , alternative medicine , physics , pathology , layer (electronics) , quantum mechanics
In this work, the authors report a cost‐effective fabrication method for making gallium nitride (GaN) light emitting diode (LED) arrays using SF 6 plasma in a conventional reactive‐ion etching (RIE) system. The etch rates for GaN were investigated with different radio‐frequency power and carrier substrates. The surface roughness due to the etching was also determined for the various recipes used. The optical intensity and the temperature change during operation of the fabricated LED's were investigated. The effect of post‐fabrication annealing on enhancement in the electrical and optical properties of the LED's was investigated.