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QE of cadmium sulphide QD photodetectors
Author(s) -
Dakhil Tahseen,
Abdulalmuhsin Samir M.,
AlKhursan Amin Habbeb
Publication year - 2018
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0777
Subject(s) - photodetector , quantum dot , optoelectronics , materials science , quantum efficiency , doping , absorption (acoustics) , zinc , cadmium , metallurgy , composite material
The absorption spectrum and quantum efficiency (QE) of cadmium sulphide/zinc oxide quantum dot (QD) photodetectors are studied at different QD sizes and junction depths. It is shown that doping the QD layer gives high QE. The structures studied cover the range 200–270 nm, which is important in photodetector applications. High QE was obtained at QDs with a small height, while wide QE bath was obtained at QD with enough (but not so much) radius.

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