Open AccessHigh sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode
Author(s) -
AbdelRahman Mohamed,
Issa Khaled,
Zia Muhammad F.,
Alduraibi Mohammad,
Siraj Mohammad,
Ragheb Amr,
Alshebeili Saleh
Publication year - 2018
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0728
Subject(s) - vanadium , pentoxide , materials science , x ray photoelectron spectroscopy , aluminium , diode , sputtering , thin film , metal , optoelectronics , metal insulator metal , fabrication , analytical chemistry (journal) , metallurgy , nanotechnology , chemical engineering , chemistry , voltage , electrical engineering , chromatography , engineering , capacitor , medicine , alternative medicine , pathology
This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V–V 2 O 5 –Al) thin film layers. The MIM diode is fabricated using electron‐beam lithography, sputter deposition and metal liftoff techniques. X‐ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V 2 O 5 insulating thin film. Electrical characterisation of the fabricated V–V 2 O 5 –Al shows a clear high sensitivity at −316 mV that reaches −8.52 V −1 with a dynamic resistance of 5.024 kΩ.