High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode | Zendy

AbdelRahman Mohamed | Zendy; Issa Khaled | Zendy; Zia Muhammad F. | Zendy; Alduraibi Mohammad | Zendy; Siraj Mohammad | Zendy; Ragheb Amr | Zendy; Alshebeili Saleh | Zendy

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High sensitivity vanadium–vanadium pentoxide–aluminium metal–insulator–metal diode

Author(s) -

AbdelRahman Mohamed,

Issa Khaled,

Zia Muhammad F.,

Alduraibi Mohammad,

Siraj Mohammad,

Ragheb Amr,

Alshebeili Saleh

Publication year - 2018

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mnl.2017.0728

Subject(s) - vanadium , pentoxide , materials science , x ray photoelectron spectroscopy , aluminium , diode , sputtering , thin film , metal , optoelectronics , metal insulator metal , fabrication , analytical chemistry (journal) , metallurgy , nanotechnology , chemical engineering , chemistry , voltage , electrical engineering , chromatography , engineering , capacitor , medicine , alternative medicine , pathology

This work reports on the fabrication of an improved sensitivity metal–insulator–metal (MIM) diode. They devise an asymmetric structure diode that cascades vanadium, vanadium pentoxide, and aluminium (V–V 2 O 5 –Al) thin film layers. The MIM diode is fabricated using electron‐beam lithography, sputter deposition and metal liftoff techniques. X‐ray photoelectron spectroscopy analysis is performed to determine the phase composition of the V 2 O 5 insulating thin film. Electrical characterisation of the fabricated V–V 2 O 5 –Al shows a clear high sensitivity at −316 mV that reaches −8.52 V −1 with a dynamic resistance of 5.024 kΩ.

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