Open AccessPerfection of leakage and ferroelectric properties of Ni‐doped BiFeO 3 thin films
Author(s) -
Wang Lingxu,
Yang Shiju,
Zhang Fengqing,
Fan Suhua
Publication year - 2018
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0554
Subject(s) - materials science , ferroelectricity , multiferroics , doping , leakage (economics) , thin film , condensed matter physics , optoelectronics , nanotechnology , physics , dielectric , economics , macroeconomics
BiFe 1− x Ni x O 3 ( x = 0%, 1, 2 and 3%) films were deposited on ITO/glass substrate using sol–gel process. The work reports the impacts of Ni doped on the crystal microstructure, leakage current, conduction mechanism and ferroelectric behaviour systematically. From the XRD analysis, all samples match well with the perovskite structure without impurity phase. Polarisation‐electric filed hysteresis loop demonstrates that the optimal Ni‐doped content of BiFeO 3 films is x = 2%, of which the remnant double polarisation (2 P r ) is 141.4 μC/cm 2 at the test electric field of 1067 kV/cm. Leakage current density curves show that Ni doping has a great contribution in reducing leakage. The value of leakage is 4.79 × 10 −7 A/cm 2 at tested electric field of 300 kV/cm. In addition, the leakage conduction mechanism transforms from the Ohmic conduction under the low electric field into the space charge limited conduction under high electric field. Ni doped does not cause significant change in the conduction mechanism.