Open AccessEffect of stamp design on residual layer thickness and contact pressure in UV nanoimprint lithography
Author(s) -
Yin Minqi,
Sun Hongwen,
Wang Haibin
Publication year - 2018
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0502
Subject(s) - nanoimprint lithography , materials science , residual , layer (electronics) , resist , lithography , contact area , optoelectronics , composite material , optics , nanotechnology , fabrication , computer science , medicine , alternative medicine , algorithm , pathology , physics
Pattern density is an important factor in UV nanoimprint stamp design. Various pattern densities may affect the thickness of the residual layer and its uniformity. This work investigated the effect of pattern density as well as other stamp parameters, including stamp material, stamp thickness and cavity height, on residual layer thickness (RLT), contact pressure, and imprint quality. Two kinds of stamps were designed for simulation, one with detached uniform lines and the other with adjacent non‐uniform lines. Results show that areas near the edges of the imprint field in all stamps are the first to achieve high contact pressure. The study observed that long imprint time enables a reduction of RLT after a stable period, particularly obvious with high density. For a long‐term imprint of patterns with various densities, flowing behaviour of the residual resist was revealed. These conclusions are beneficial for making guidelines for stamp design in UV nanoimprint lithography.