Open AccessEffect of high‐ k dielectric on the performance of Si, InAs and CNT FET
Author(s) -
Mech Bhubon Chandra,
Kumar Jitendra
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0088
Subject(s) - materials science , transconductance , optoelectronics , dielectric , gate dielectric , high κ dielectric , nanowire , field effect transistor , gate oxide , equivalent oxide thickness , indium gallium arsenide , subthreshold slope , indium arsenide , transistor , nanotechnology , gallium arsenide , electrical engineering , voltage , engineering
The important issue of selection of gate dielectrics to reduce short channel effects (SCEs) is presented along with the study of different channel materials in transistors. A comparative study of performance was carried out of silicon dioxide (SiO 2 ), aluminium oxide (Al 2 O 3 ), hafnium oxide (HfO 2 ), lanthanum oxide (La 2 O 3 ) and titanium dioxide (TiO 2 ) as gate dielectrics for Si double gate field‐effect transistor (FET), Si gate all around (GAA) nanowire FET (NWFET), indium arsenide GAA NWFET and carbon nanotube (CNT) FETs within non‐equilibrium Green's function formalism. Simulated results show that TiO 2 is better gate dielectric as compared with SiO 2 , Al 2 O 3 , HfO 2 and La 2 O 3 , with near ideal subthreshold swing (60 mV/decade), lower I off , improved drain‐induced barrier lowering and high transconductance ( g m ). Also, the gate capacitance ( C g ), cut‐off frequency ( f T ) and switching time ( τ ) improve with the high‐ k dielectric materials. Furthermore, the study of different channel material shows that CNT has better SCEs, smaller C g with τ ranging from 13.5 to 12.5 fs suitable for digital applications and f T of about 7–9 THz.