Open AccessSimulation study of high‐reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode
Author(s) -
Wang Zeheng,
Wang Fangzhou,
Guo Songnan,
Wang Zirui
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2017.0057
Subject(s) - materials science , schottky diode , rectifier (neural networks) , blocking (statistics) , optoelectronics , anode , diode , buffer (optical fiber) , breakdown voltage , schottky barrier , voltage , power semiconductor device , peak inverse voltage , composite number , wide bandgap semiconductor , electrical engineering , computer science , electrode , composite material , voltage source , chemistry , engineering , computer network , stochastic neural network , machine learning , recurrent neural network , artificial neural network , dropout voltage
In this study, a novel AlGaN/GaN power rectifier with an integrated lateral composite buffer diode (IBD‐Rectifier) for reverse blocking capability improvement is proposed and investigated by Sentaurus simulations (this paper includes only simulated data and no real experimental result). AlGaN buffer layer under the anode is adopted to realise great high reverse blocking capability. A minimum turn‐on voltage of 0.6 V and a maximum breakdown voltage (BV) >1.3 kV are simultaneously obtained in the IBD‐Rectifier, resulting in a high Baliga's figure of merits BV 2 / R on,sp ( R on,sp is specific‐on resistance) of ∼3000 MW/cm 2 . In comparison with MIS‐gated hybrid anode diode and conventional schottky barrier diode, the IBD‐Rectifier delivers an excellent theoretical method to achieve superior performances in high‐efficiency GaN power applications.