Open AccessStreet nanotexturing of n‐GaN for enhancing light extraction in GaN LEDs
Author(s) -
Hsu ChiaLiang,
Kumar Amarendra,
Kashyap Kunal,
Hou Max TiKuang,
Yeh JerLiang Andrew
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0701
Subject(s) - light emitting diode , optoelectronics , materials science , wide bandgap semiconductor , gallium nitride , extraction (chemistry) , nanotechnology , chemistry , layer (electronics) , chromatography
The output power of conventional light‐emitting diodes (LEDs) is enhanced by 9% at 120 mA current without alterations to the existing fabrication techniques and to the multi‐quantum well (MQW) junction. The output power is improved by nanotexturing the street of the n‐gallium nitride (GaN) layer that was unexploited, for the enhancement of the optical or electrical properties. The nanotextured street enhances the light extraction exclusively near the street of the n‐GaN layer by reducing the reflections from the LED surface. Similar light output patterns and I–V characteristics for LEDs with and without street nanotexturing were observed, confirming that the enhanced light extraction has been achieved without a change in the spatial distribution of light or in the properties of the MQW junction. A new approach for the output power enhancement of all types of existing LEDs is provided.