Open AccessEnhanced performance of large‐area vertical light‐emitting diodes treated by laser irradiation
Author(s) -
Li Yang,
Wu Qun,
Meng FanYi,
Sung HoKun,
Yao Zhao,
Sun RunYuan,
Wang Cong
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0699
Subject(s) - materials science , irradiation , optoelectronics , laser , gallium nitride , wafer , light emitting diode , diode , wide bandgap semiconductor , substrate (aquarium) , power density , optics , layer (electronics) , nanotechnology , power (physics) , oceanography , physics , geology , nuclear physics , quantum mechanics
In this work, a comparative analysis of vertical light‐emitting diodes (VLEDs) examining the device properties is performed with different surface treatment schemes. The VLEDs on graphite substrate are fabricated by the laser lift‐off and the wafer bonding processes. The significance of KrF laser irradiation to form protrusions on the surfaces of undoped gallium nitride (u‐GaN) and n‐GaN is analysed in detail. The light output power of the fabricated VLEDs is significantly increased through the formation of micro‐sized protrusions by the laser irradiation. For VLED irradiated with an energy density of 600 mJ/cm 2 on n‐GaN surface with a thin u‐GaN layer, the light output power is improved by 24.8% at 350 mA without degradation of electrical properties compared with that of the conventional VLED.