Open AccessLight emitting from the self‐interstitial clusters buried in the Si + self‐ion implanted Si films
Author(s) -
OuYang Lingxi,
Wang Chong,
Zhou Mengwei,
Yang Jie,
Yang Yu
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0511
Subject(s) - photoluminescence , annealing (glass) , silicon , ion , materials science , ion implantation , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , organic chemistry , chromatography
The photoluminescence (PL) properties corresponding to different types of the interstitial clusters (or defects) in the silicon ion (Si + ) self‐implanted Si have been well reviewed. Given a brief of the conjectural origin, defect type, annealing temperature of the W (1218 nm), X (1193 nm) peak, R (1376 nm), and D bands concluded the present application of Si + self‐ion‐implantation. The challenges for application of light‐emitting Si and application prospects are also discussed.