Open AccessTwo‐dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field‐effect transistor
Author(s) -
Sharma Dheeraj,
Raad Bhagwan Ram,
Yadav Dharmendra Singh,
Kondekar Pravin,
Nigam Kaushal
Publication year - 2017
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0351
Subject(s) - gate dielectric , work function , quantum tunnelling , optoelectronics , subthreshold slope , metal gate , drain induced barrier lowering , materials science , subthreshold conduction , electric field , gate oxide , dielectric , poisson's equation , field effect transistor , transistor , electrical engineering , voltage , engineering , physics , nanotechnology , layer (electronics) , quantum mechanics
Low ON current and conduction for the negative gate‐to‐source voltage are the major drawbacks of the steep subthreshold slope tunnel field‐effect transistor (TFET). Low work function on the source side of gate contact, high‐κ gate dielectric and highly doped layer (delta doping) helps to enhance the ON current of the device. Whereas, low work function of gate electrode on the drain side and low‐ κ gate dielectric is used to eliminate the problem of conduction for the negative gate‐to‐source voltage. In the same concern, an analytical model for potential distribution of tri metal hetero gate dielectric delta doped TFET is developed by solving the two‐dimensional (2D) Poisson's equation. Moreover, the extraction of electric field is performed by the developed potential model. However, model of drain current for the device is based on the Kane's band‐to‐band tunnelling generation rate. Finally, the verification of the developed model is performed with the 2D technology computer aided design ATLAS simulation results.