Open AccessOptical storage behaviour in InAs quantum dots embedded in GaAs quantum well structure
Author(s) -
Lu Haidong,
Guo Fangmin,
Zhang Bing,
Ning Wenguo
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0339
Subject(s) - quantum dot , optoelectronics , photocurrent , optical storage , photonics , photon , voltage , capacitance , computer data storage , gallium arsenide , materials science , 3d optical data storage , physics , optics , electrode , computer science , quantum mechanics , operating system
The optical storage behaviour of InAs quantum dots (QDs) device has been investigated by testing capacitance–voltage ( C – V ) and current–voltage ( I – V ) character. Since QDs are embedded in the GaAs quantum well, it can be charged by the spatial separation of electrons and holes. When the device is biased in a storage mode, the optical excitation with the photon energy larger than the energy gap gives rise to a step jump in the responsive current, which is previously stored in the device during the illumination. The holes in the QDs which represent the stored information are storage and deletion by bias. The storage time is on the order of milliseconds as measured by pulsed photovoltage/photocurrent response ratio of the device. The device structure can be used as a photonic memory cell because of long storage time and fast retrieval of photons. Moreover, the memory operation can be carried out by applying a lower voltage.