Open AccessSuper junction LDMOS with step field oxide layer
Author(s) -
Cao Zhen,
Duan Baoxing,
Yuan Xiaoning,
Yuan Song,
Yang Yintang
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0331
Subject(s) - ldmos , breakdown voltage , electric field , materials science , optoelectronics , transistor , layer (electronics) , oxide , voltage , power mosfet , electrical engineering , mosfet , nanotechnology , engineering , physics , metallurgy , quantum mechanics
A novel step‐oxide super junction‐lateral double‐diffused metal–oxide–semiconductor field‐effect transistor (SOSJ‐LDMOS) structure is proposed and optimised which allows the high breakdown voltage (BV) and low‐specific on‐resistance ( R on , sp ). The proposed structure overcomes the effect of thick field oxide formed by shallow trench isolation process in conventional buffer layer SJ‐LDMOS ( N ‐buffered SJ‐LDMOS), effectively enhancing the performance of the SJ‐LDMOS. Thanks to the SO layer, a new electric field peak has been introduced in the surface electric field distribution, which makes the lateral surface electric field uniform in the off‐state. Moreover, due to the thinner oxide layer, in the on‐state the majority of electron current is accumulated near the top surface under the field plate and the thinner oxide layer also provides a wider current flowing path. In the virtue of integrated systems engineering (ISE) simulation, not only has the BV of SOSJ‐LDMOS been increased, but also the R on , sp has been reduced simultaneously compared with the N ‐buffered SJ‐LDMOS in the same drift length. In addition, when SOSJ‐LDMOS and N ‐buffered LDMOS are at the same BV, the R on , sp of SOSJ‐LDMOS is decreased by 26.3–38.9%, compared with the N ‐buffer SJ‐LDMOS.