Study on the chemical bond structure and chemical stability of  N  doped into TiO 2  film by  N  ion beam implantation | Zendy

Liu Jindong | Zendy; Zhao Shiping | Zendy; Wang Hualin | Zendy; Cui Yunxian | Zendy; Jiang Weiwei | Zendy; Liu Shimin | Zendy; Wang Nan | Zendy; Liu Chaoqian | Zendy; Chai Weiping | Zendy; Ding Wanyu | Zendy

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Study on the chemical bond structure and chemical stability of N doped into TiO 2 film by N ion beam implantation

Author(s) -

Liu Jindong,

Zhao Shiping,

Wang Hualin,

Cui Yunxian,

Jiang Weiwei,

Liu Shimin,

Wang Nan,

Liu Chaoqian,

Chai Weiping,

Ding Wanyu

Publication year - 2016

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mnl.2016.0322

Subject(s) - materials science , crystallinity , x ray photoelectron spectroscopy , amorphous solid , diffractometer , analytical chemistry (journal) , anatase , sputter deposition , sputtering , band gap , crystallite , doping , thin film , crystallography , nanotechnology , scanning electron microscope , chemical engineering , photocatalysis , composite material , chemistry , metallurgy , optoelectronics , engineering , catalysis , biochemistry , chromatography

Titanium dioxide (TiO 2 ) film was deposited by DC pulse magnetron sputtering technique. The surface of TiO 2 film was implanted by N ion beam at room temperature and N doped TiO 2 (N‐TiO 2 ) film was obtained. X‐ray diffractometer result showed that with the increase of sputtering power, the crystal structure of TiO 2 film changed from amorphous to anatase polycrystalline structure. Transmission electron microscopy result revealed that nanoscale clusters existed in amorphous TiO 2 film. The bandgap of TiO 2 film was about 3.28 ± 0.05 eV. X‐ray photoelectron spectroscopy results revealed that N ion was doped into TiO 2 film as Ti–N and Ti–NO bonds. With increasing TiO 2 film crystallinity, N atom‐percent and ratio of Ti–N to Ti–NO decreased and increased, respectively. TiO 2 film deposited with 900 W in sputtering power, N atom‐percent decreased to 6.6 at.% and ratio of Ti–N to Ti–NO increased to 0.81:1. The bandgap of N‐TiO 2 film was about 3.02 ± 0.07 eV. N atom‐percent and ratio of Ti–N to Ti–NO kept at 2.73 ± 0.26 at.% and (0.87 ± 0.03):1 for all annealed N‐TiO 2 films. The bandgap of annealed N‐TiO 2 film was about 3.16 ± 0.03 eV. So, the crystallinity of TiO 2 film was one of most important parameters, which influenced the chemical bond structure and chemical stability of N in TiO 2 films.

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