Open AccessFine‐pitch through‐silicon via integration with self‐aligned back‐side benzocyclobutene passivation layer
Author(s) -
Guan Yong,
Ma Shenglin,
Zeng Qinghua,
Chen Jing,
Jin Yufeng
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0267
Subject(s) - benzocyclobutene , passivation , materials science , chemical mechanical planarization , layer (electronics) , silicon , optoelectronics , etching (microfabrication) , through silicon via , fabrication , nanotechnology , dielectric , pathology , medicine , alternative medicine
A fine‐pitch through‐silicon via integration approach with self‐aligned back‐side benzocyclobutene passivation layer is proposed. Different from the conventional lithographic process, the passivation layer is realised by leveraging plasma etching and chemical‐mechanical polishing process. With its well‐controlled repeatability, this approach can help reduce the process defect and copper contamination. A plenty of measurement techniques including X‐ray radiographic testing, optical and scanning electron microscope observation, four‐probe electrical measurement, as well as vector network analyser, are employed in order to verify the fabrication quality and the electrical performances. All the test results support that this fine‐pitch through‐silicon via integration approach has a promising application prospect.