Open AccessApproach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
Author(s) -
Nigam Kaushal,
kondekar Pravin,
Sharma Dheeraj
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0178
Subject(s) - ambipolar diffusion , quantum tunnelling , tunnel field effect transistor , ion , optoelectronics , transistor , field effect transistor , materials science , doping , dual (grammatical number) , electrical engineering , physics , engineering , plasma , voltage , quantum mechanics , art , literature
A dual material control gate tunnel field effect transistor (TFET) for asymmetric doping at source and drain regions is proposed. The gate consists of three segment different workfunctions ϕ 1 , ϕ 2 , and ϕ 3 , which are named as tunnelling gate ( M 1 ), control gate ( M 2 ), and auxiliary gate ( M 3 ), respectively. Forward to this, three possible combinations of ϕ 1 , ϕ 2 and ϕ 3 to maintain the dual workfunctionality of the device ( ϕ 2 = ϕ 3 > ϕ 1 , ϕ 1 = ϕ 2 > ϕ 3 , ϕ 1 = ϕ 3 < ϕ 2 ) were considered. Further, the comparison of these possible combinations are performed with conventional TFET ( ϕ 1 = ϕ 2 = ϕ 3 ). Among these ϕ 1 = ϕ 3 < ϕ 2 , generates most optimum results in terms of suppression of ambipolar behaviour, and enhancement in ON state current ( I ON ) of the device. The proposed device shows significant improvement in terms of I ON (1.66 × 10 −5 A/ μ m for SiO 2 ), I ON / I OFF (7.22 × 10 11 ), and sub‐threshold swing (∼19 mV/decade) as compared with conventional and the dual material TFET devices. Further, the analysis of analogue/RF performance is performed for the devices showing optimum performance in terms of suppression of ambipolar behaviour.