Open AccessCarrier mobility extraction method in ChGs in the UV light exposure
Author(s) -
Saremi Mehdi
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0132
Subject(s) - ionic bonding , chalcogenide , materials science , electron , acceptor , optoelectronics , electron mobility , chemical physics , van der waals force , semiconductor , ultraviolet light , chemistry , ion , condensed matter physics , molecule , physics , organic chemistry , quantum mechanics
One of the significant advantages of the ultraviolet (UV) light exposure of chalcogenide glasses (ChGs), photodoping process, is in the application of programmable metallisation cells (PMCs) as a novel non‐volatile resistive memory. The memory state of a PMC is dictated by the formation or dissolution of a metallic filament in a ChG film between active metal and inert metal contacts. Owing to relatively rigid covalent bonds mixed with soft van der Waals interconnections, ChGs are able to form acceptor‐like traps where electrons are absorbed, and therefore electron mobility decreases compared with crystallised structures. The role of electrons in the interaction with ionic species in ChGs is inevitable. One the other hand, holes are considered as majority carries and their role in interaction with the system is also significant. Therefore, knowing carrier mobility in ChGs is essential. To extract carrier mobilities, for the first time a circuit setup accompanying with time constant extraction method for Ge 30 Se 70 as a ChG material without and with UV light exposure is proposed. Owing to being straightforward, this method can be applied to other ChG materials as well as other light sources or even ionising radiation particles.