Open AccessUltrathin‐body tunnelling FET using a trench structure
Author(s) -
Wang Ying,
Wang Yanfu,
Sun Lingling,
Xue Wei,
Cao Fei
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0082
Subject(s) - trench , quantum tunnelling , materials science , optoelectronics , transistor , field effect transistor , ion , channel (broadcasting) , swing , nanotechnology , physics , electrical engineering , voltage , layer (electronics) , engineering , quantum mechanics , acoustics
An ultrathin‐channel trench single gate tunnelling field‐effect transistor (trench SG‐TFET) with a 5 nm channel thickness is proposed and investigated. Trench SG‐TFETs demonstrate a higher I ON (∼8 times), a steeper sub‐threshold swing (SS) (average SS of 46.2 mV/decade and point SS of 21.8 mV/decade), and a higher I ON / I OFF current ratio (∼10 times) as compared with the conventional SG‐TFET at V DS = 0.4 V and temperature of 300 K. Also by using intrinsic region in drain, it has a strong immunity to short‐channel effects in extremely scaled trench SG‐TFETs. The proposed trench SG‐TFET seems to be attractive for future energy‐efficient circuit applications.