Open AccessPhysics‐based simulation study of high‐performance gallium arsenide phosphide–indium gallium arsenide tunnel field‐effect transistor
Author(s) -
Raad Bhagwan Ram,
Sharma Dheeraj,
Nigam Kaushal,
Kondekar Pravin
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2016.0050
Subject(s) - gallium arsenide , indium arsenide , indium phosphide , indium gallium arsenide , materials science , optoelectronics , ambipolar diffusion , subthreshold slope , field effect transistor , gallium phosphide , arsenide , transistor , voltage , electrical engineering , physics , engineering , electron , quantum mechanics
For the first time, this work presents a novel combination of gallium arsenide phosphide (GaAsP) and indium gallium arsenide (InGaAs) as drain/channel and source materials, respectively, of tunnel field‐effect transistor (TFET) for high‐performance ultra‐low‐power applications. With this combination, the ON‐state current of the proposed device is improved ten times as compared with GaAs–Ge TFET; however, the ambipolar current remains equal to the OFF‐state current. It also exhibits a very low threshold voltage (half in amount) as compared with GaAs–Ge TFET. Apart from these, GaAsP–InGaAs TFET shows huge reduction in the subthreshold slope for better switching operation.