Open AccessTemperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors
Author(s) -
Ossaimee Mahmoud,
El Sabbagh Mona,
Gamal Salah
Publication year - 2016
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0448
Subject(s) - thermionic emission , quantum tunnelling , schottky barrier , carbon nanotube field effect transistor , carbon nanotube , materials science , thermal conduction , schottky effect , condensed matter physics , cutoff frequency , field effect transistor , poisson's equation , schottky diode , transistor , optoelectronics , physics , nanotechnology , electron , voltage , quantum mechanics , diode , composite material
Temperature dependence of the characteristics of a Schottky‐barrier carbon nanotube field effect transistor has been investigated in detail. This study was performed using two‐dimensional quantum simulator based on self‐consistent solution of non‐equilibrium Green's function formalism with Poisson's equation. From discrepancy in performance of ON and OFF states with temperature, it was concluded that the main dominant component of the conduction mechanism in the OFF state is the thermionic emission while in the ON‐state is the tunnelling mechanism. Also, the temperature dependence of the frequency response was studied. They found that the temperature enhances the cutoff frequency. Compact models for OFF current and subthreshold swing with temperature are also proposed and compared with the numerical results.