Investigation of room temperature deposited silicon dioxide thin films for surface texturisation of monocrystalline {100} silicon

In the fabrication of crystalline silicon‐based solar cells, silicon surface is usually texturised by wet anisotropic etchant without using any masking pattern. This method provides randomly oriented upright pyramids (or hillocks) of varying sizes. However, a surface textured with inverted pyramids yields high efficiency compared with the one textured with normal pyramids. Silicon dioxide thin films synthesised using anodic oxidation technique at room temperature are explored as etch mask in KOH solutions to texturise the Si{100} surface with inverted pyramids without patterning of the oxide layer using lithography. Oxide films of ∼50 nm thickness are synthesised in different compositions of the electrolyte under potentiodynamic regime. Thickness uniformity and refractive index of the as‐grown oxide films are measured using spectroscopic ellipsometry. Scanning electron microscope is primarily used to inspect the etched surface morphology. The composition of the electrolyte, KOH concentration and etching time are optimised for the maximum surface coverage of inverted pyramids. The surface texturing process demonstrated is very simple and economic as it utilises anodic silicon dioxide as an etch mask, which is deposited by a simple experimental setup and the process does not involve any lithography step.