Open AccessSilicon on insulator pressure sensor based on a thermostable electrode for high temperature applications
Author(s) -
Liu G.D.,
Cui W.P.,
Hu H.,
Zhang F.S.,
Zhang Y.X.,
Gao C.C.,
Hao Y.L.
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0181
Subject(s) - electrode , materials science , silicon on insulator , pressure sensor , optoelectronics , insulator (electricity) , silicon , nanotechnology , chemistry , mechanical engineering , engineering
A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30–150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.