Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications | Zendy

Liu G.D. | Zendy; Cui W.P. | Zendy; Hu H. | Zendy; Zhang F.S. | Zendy; Zhang Y.X. | Zendy; Gao C.C. | Zendy; Hao Y.L. | Zendy

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Silicon on insulator pressure sensor based on a thermostable electrode for high temperature applications

Author(s) -

Liu G.D.,

Cui W.P.,

Hu H.,

Zhang F.S.,

Zhang Y.X.,

Gao C.C.,

Hao Y.L.

Publication year - 2015

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mnl.2015.0181

Subject(s) - electrode , materials science , silicon on insulator , pressure sensor , optoelectronics , insulator (electricity) , silicon , nanotechnology , chemistry , mechanical engineering , engineering

A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy. To solve the measurement problem, a novel calibration setup is designed to calibrate the absolute pressure sensor at extremely high temperatures. The measurement results have shown that the pressure sensor has a nonlinearity error of 0.17%FS and a sensitivity of 0.24 mV/kPa with a measurement range of 30–150 kPa at 500°C, indicating the good thermal stability of the ohmic contacts.

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