Open AccessSilicon‐based, low‐g microelectromechanical systems inertial switch for linear acceleration sensing application
Author(s) -
Xiong Zhuang,
Zhang Fengtian,
Pu Yingdong,
Tang Bin,
Yang Jie,
Wang Chao
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0059
Subject(s) - microelectromechanical systems , surface micromachining , silicon on insulator , materials science , proof mass , silicon , accelerometer , wafer , acceleration , inertial frame of reference , stiffness , bulk micromachining , optoelectronics , computer science , fabrication , physics , composite material , medicine , alternative medicine , pathology , classical mechanics , quantum mechanics , operating system
Most of the microelectromechanical systems inertial switches developed in recent years are intended for shock and impact sensing above 40 g. These switches are fabricated based on non‐silicon surface micromachining with multiple steps of electroplating. In this reported work, a silicon‐based low‐g inertial switch typically used for linear acceleration sensing was conceived, designed and fabricated. The developed inertial switch consists of a high volume proof mass and low stiffness spiral spring, and is fabricated in a specially designed double‐buried layer silicon‐on‐insulator wafer, with standard silicon micromachining. The measurement results show that the threshold value is about 7.42 g and the stiffness is about 1.5 N/m, in accordance with the finite element method calculation.