Open AccessEpitaxial growth of graphene thin film by pulsed laser deposition
Author(s) -
Wang Jin,
Xiong Zhengwei,
Yu Jian,
Yin Hongbu,
Wang Xuemin,
Peng Liping,
Wang Yuying,
Wang Xinmin,
Jiang Tao,
Cao Linhong,
Wu Weidong,
Wang Chuanbin,
Zhang Lianmeng
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0047
Subject(s) - pulsed laser deposition , graphene , materials science , epitaxy , optoelectronics , thin film , deposition (geology) , laser , nanotechnology , optics , layer (electronics) , physics , geology , paleontology , sediment
Epitaxial graphene films have been prepared by pulsed laser deposition. X‐ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp 2 ‐C. Raman spectroscopy indicates that there exists 2 D and D peaks and thus graphene structures have been formed. Meanwhile, according to high‐resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.