Titanium oxide vertical resistive random‐access memory device | Zendy

Fryauf David M. | Zendy; Norris Kate J. | Zendy; Zhang Junce | Zendy; Wang ShihYuan | Zendy; Kobayashi Nobuhiko P. | Zendy

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Titanium oxide vertical resistive random‐access memory device

Author(s) -

Fryauf David M.,

Norris Kate J.,

Zhang Junce,

Wang ShihYuan,

Kobayashi Nobuhiko P.

Publication year - 2015

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mnl.2015.0021

Subject(s) - resistive random access memory , materials science , random access memory , oxide , resistive touchscreen , optoelectronics , titanium oxide , titanium , computer science , operating system , electrical engineering , metallurgy , chemical engineering , computer hardware , engineering , voltage

Pt/TiO 2 /Pt vertical resistive random‐access memory switching devices were fabricated in a vertical three‐dimensional structure by combining conventional photolithography, electron‐beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross‐sectional area was ∼0.02 µm 2 , which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross‐sectional scanning, transmission electron microscopy and current–voltage characteristics.

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