Open AccessTitanium oxide vertical resistive random‐access memory device
Author(s) -
Fryauf David M.,
Norris Kate J.,
Zhang Junce,
Wang ShihYuan,
Kobayashi Nobuhiko P.
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0021
Subject(s) - materials science , resistive random access memory , optoelectronics , fabrication , photolithography , dielectric , atomic layer deposition , electrode , electron beam physical vapor deposition , transmission electron microscopy , layer (electronics) , evaporation , nanotechnology , chemical vapor deposition , chemistry , medicine , alternative medicine , physics , pathology , thermodynamics
Pt/TiO 2 /Pt vertical resistive random‐access memory switching devices were fabricated in a vertical three‐dimensional structure by combining conventional photolithography, electron‐beam evaporation for electrodes and atomic layer deposition for dielectric layers. The active switching cross‐sectional area was ∼0.02 µm 2 , which is comparable to nanosized devices that require more elaborative fabrication processes. Structural integrity and electrical characteristics of the vertical memory device were analysed by cross‐sectional scanning, transmission electron microscopy and current–voltage characteristics.