Open AccessOptimum current‐voltage characteristics of GaAs/AlAs intraband microwave devices
Author(s) -
Yang Chih Chin,
Su Yan Kuin,
Chang Ting Chang
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2015.0002
Subject(s) - quantum tunnelling , current density , materials science , conduction band , band bending , diode , current (fluid) , microwave , quantum well , condensed matter physics , optoelectronics , peak current , optics , electrical engineering , electron , physics , electrode , laser , quantum mechanics , electrochemistry , engineering
In this reported work, both high peak current density and high peak‐to‐valley current ratio (PVCR) in AlAs/GaAs triple‐barrier quantum‐well intraband resonant tunnelling diodes (TBQW IRTDs) were accomplished. The valley current density ( J V ) of TBQW IRTDs can be degraded as the barrier thickness reaches 4 nm thickness. This result suggests narrow barrier thickness is due to the slight band bending effect in the conduction band of i ‐AlAs barrier layers. The peak current density ( J P ) of the TBQW IRTDs will be <2.43 KA/cm 2 as the i ‐AlAs barriers thickness of the TBQW IRTD reaches 5 nm thickness. The optimal thickness of barrier layers should be selected at 4 nm thickness to obtain the highest PVCR value (about 4270), in which the sample with barrier layers of 4 nm thickness possesses the lowest valley current density.