Open AccessMetallic tube‐tolerant ternary dynamic content‐addressable memory based on carbon nanotube transistors
Author(s) -
Hellkamp Daniel,
Nepal Kundan
Publication year - 2015
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2014.0582
Subject(s) - ternary operation , materials science , carbon nanotube , tube (container) , nanotube , nanotechnology , transistor , metal , dynamic random access memory , optoelectronics , composite material , metallurgy , computer science , electrical engineering , computer hardware , semiconductor memory , engineering , voltage , programming language
The design of a dynamic content‐addressable memory (DCAM) cell using carbon nanotube (CNT) field effect transistors is explored. A four CNTFET design is presented and the functionality of a ternary DCAM cell using SPICE simulation is verified. Using an array of asymmetrically correlated tube technique, it is demonstrated how the presented design could be made functional even in the presence of metallic CNTs.