Open AccessNumerical simulations of light‐extraction efficiencies of light‐emitting diodes on micro and nanopatterned sapphire substrates
Author(s) -
Cui Hao,
Park SiHyun
Publication year - 2014
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2014.0373
Subject(s) - light emitting diode , microscale chemistry , materials science , sapphire , optoelectronics , gallium nitride , diode , nanoscopic scale , optics , planar , nanotechnology , layer (electronics) , laser , mathematics education , mathematics , computer graphics (images) , computer science , physics
Numerical simulations are performed to investigate the light‐extraction efficiencies (LEEs) of gallium nitride‐based light‐emitting diodes (LEDs) on patterned sapphire substrates (PSSs), using the three‐dimensional finite‐difference time‐domain method. PSSs with hexagonal arrays of cone‐shaped patterns were used, and the pitch of the pattern array, pattern fill factor and pattern height were varied from nanoscale to microscale. The relative LEE for each PSS‐LED was calculated, and the geometrical parameters were analysed for optimised light extraction enhancement of the PSS‐LEDs.