Open AccessReverse conducting lateral insulated‐gate bipolar transistors with a non‐local band‐to‐band tunnelling junction
Author(s) -
Fu Qiang,
Zhang Bo,
Qiao Ming,
Li Xuan,
Luo Xiaorong,
Li Zhaoji
Publication year - 2014
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2014.0114
Subject(s) - quantum tunnelling , materials science , optoelectronics , diode , flyback diode , transistor , electrical engineering , current injection technique , power semiconductor device , bipolar junction transistor , insulated gate bipolar transistor , voltage , engineering , flyback transformer , transformer
A new reverse conducting lateral insulated‐gate bipolar transistor (LIGBT) structure with a non‐local band‐to‐band tunnelling junction is proposed and its operating principle is demonstrated in detail for a power‐switching device. By utilising the reverse bias characteristics of the tunnelling junction, the proposed LIGBT can operate successfully in the freewheeling diode mode without an external anti‐parallel diode. Analysis has illustrated that the proposed LIGBT can achieve a reverse knee voltage of −1 V and a lower reverse conduction voltage drop of −1.4 V at a current density of 100 A/cm 2 . It also shows a good temperature effect on the forward and reverse current. Moreover, it exhibits a better soft reverse recovery performance and about two times higher soft factor than the lateral P‐i‐N diode.