Open AccessEnhanced electroluminescence of all‐inorganic colloidal quantum dot light‐emitting diode by optimising the MoO 3 intermediate layer
Author(s) -
Tang Liyuan,
Zhao Junliang,
Zhang Xiaoli,
Dai Haitao,
Sun Xiaowei
Publication year - 2014
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2014.0079
Subject(s) - electroluminescence , quantum dot , materials science , molybdenum trioxide , optoelectronics , layer (electronics) , light emitting diode , indium tin oxide , non blocking i/o , diode , tungsten trioxide , indium , oxide , molybdenum , nanotechnology , chemistry , metallurgy , tungsten , biochemistry , catalysis
The effects of the molybdenum trioxide (MoO 3 ) intermediate layer on the performance of all‐inorganic colloidal quantum dot light‐emitting diodes (QD‐LEDs) with a structure of ITO/MoO 3 /NiO/QDs/ZnO/Al are explored. MoO 3 layers with different thickness were inserted between the indium tin oxide and nickel oxide layer via a thermal evaporation process. The presented results show that an ultrathin (∼ 5 nm) MoO 3 intermediate layer significantly enhanced the electroluminescence (EL) intensity of the QD‐LED, which was more than 100 times higher than the device without the MoO 3 layer. It is suggested that the EL enhancement originates from the effectively facilitated injection of holes into quantum dots through the MoO 3 intermediate layer.