Enhanced electroluminescence of all‐inorganic colloidal quantum dot light‐emitting diode by optimising the MoO 3  intermediate layer | Zendy

Tang Liyuan | Zendy; Zhao Junliang | Zendy; Zhang Xiaoli | Zendy; Dai Haitao | Zendy; Sun Xiaowei | Zendy

Open Access

Enhanced electroluminescence of all‐inorganic colloidal quantum dot light‐emitting diode by optimising the MoO 3 intermediate layer

Author(s) -

Tang Liyuan,

Zhao Junliang,

Zhang Xiaoli,

Dai Haitao,

Sun Xiaowei

Publication year - 2014

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mnl.2014.0079

Subject(s) - electroluminescence , optoelectronics , quantum dot , light emitting diode , materials science , diode , layer (electronics) , colloid , nanotechnology , chemical engineering , engineering

The effects of the molybdenum trioxide (MoO 3 ) intermediate layer on the performance of all‐inorganic colloidal quantum dot light‐emitting diodes (QD‐LEDs) with a structure of ITO/MoO 3 /NiO/QDs/ZnO/Al are explored. MoO 3 layers with different thickness were inserted between the indium tin oxide and nickel oxide layer via a thermal evaporation process. The presented results show that an ultrathin (∼ 5 nm) MoO 3 intermediate layer significantly enhanced the electroluminescence (EL) intensity of the QD‐LED, which was more than 100 times higher than the device without the MoO 3 layer. It is suggested that the EL enhancement originates from the effectively facilitated injection of holes into quantum dots through the MoO 3 intermediate layer.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research