Open AccessType of distortionless through silicon via design based on the multiwalled carbon nanotube
Author(s) -
Lu Qijun,
Zhu Zhangming,
Yang Yintang,
Ding Ruixue
Publication year - 2013
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2013.0610
Subject(s) - materials science , inductance , distortion (music) , conductor , linearity , signal (programming language) , silicon , propagation constant , carbon nanotube , through silicon via , nanotube , composite material , electronic engineering , optoelectronics , electrical engineering , computer science , engineering , voltage , amplifier , cmos , programming language
The concept of a distortionless through silicon via (TSV), which uses a multiwalled carbon nanotube (MWCNT) as conductor material, is proposed. The design requirements and the design method for the distortionless TSV are presented. In the high‐frequency band, the propagation constant of the traditional Cu‐TSV will deviate from the linear function of the frequency because of the skin effect, inducing the transmission signal distortion. MWCNT bundles have properties where the resistance and the inductance are almost constant with the frequency, which can meet the design requirements for a distortionless TSV. Compared with the identical dimensions Cu‐TSV, the TSV designed by using the proposed method with MWCNT bundles as the conductor material has the preferable linearity of the propagation constant with the frequency in the high‐frequency band, so that it can reduce the distortion of the transmission signal.