Open AccessInterfacial X‐ray photospectrometry study of In 0.53 Ga 0.47 As under different passivation treatments for metal oxide semiconductor field effect transistor devices
Author(s) -
Mohd Razip Wee M.F.,
Dehzangi A.,
Wichmann N.,
Bollaert S.,
Yeop Majlis Burhanuddin
Publication year - 2013
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2013.0560
Subject(s) - passivation , materials science , field effect transistor , semiconductor , optoelectronics , metal , transistor , oxide , nanotechnology , metallurgy , electrical engineering , layer (electronics) , engineering , voltage
In this reported work, comparison is made of a passivation treatment of a III–V compound semiconductor using ammonia and ammonium sulphide solution. The treatment is applied on In 0.53 Ga 0.47 As which is chosen for its high mobility especially in high electron mobility transistors. The samples were treated with various parameters such as precursor, vacuum condition and different chemical solutions. Then, samples were deposited with the high k ‐dielectric Al 2 O 3 (4 nm thickness) using the atomic layer deposition technique. Five different passivation treatments were used to give proper comparison. Native oxide elements and contaminants were inspected at the interface of the oxide layer and the substrate using X‐ray photospectrometry in different angles (25° and 70°). The results indicate the effectiveness of some treatments to eliminate the oxide of gallium and arsenic with a slight presence of indium oxide.