Open AccessAl‐doped ZnS thin films for buffer layers of solar cells prepared by chemical bath deposition
Author(s) -
Liao Jie,
Cheng Shuying,
Zhou Haifang,
Long Bo
Publication year - 2013
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2013.0039
Subject(s) - raman spectroscopy , chemical bath deposition , fourier transform infrared spectroscopy , doping , materials science , analytical chemistry (journal) , thin film , band gap , annealing (glass) , electrical resistivity and conductivity , chemistry , chemical engineering , nanotechnology , optics , metallurgy , chromatography , physics , electrical engineering , optoelectronics , engineering
In this reported study, Al‐doped ZnS (ZnS:Al) thin films were fabricated by chemical bath deposition in alkaline condition along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride buffer solution. Al concentrations were varied from 0 to 10 at.%. The structure and composition of the films were confirmed by X‐ray diffraction (XRD), Fourier transform infrared (FTIR) spectra and Raman spectroscopy. The XRD, FTIR and Raman spectra confirmed the existence of ZnS and Al–S bond, which had some effects on the properties of the films. The optical characteristics indicated the changes of the bandgap with the Al‐doping concentrations. The resistivity of the ZnS:Al films with different Al‐doping concentrations after annealing was analysed and the sample with 6 at.% Al concentration had the lowest resistivity of 9.9 × 10 4 Ω cm.