Open AccessSize‐dependent photoluminescence in silicon nanostructures: quantum confinement effect
Author(s) -
Kumar V.,
Saxena K.,
Shukla A.K.
Publication year - 2013
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mnl.2012.0910
Subject(s) - photoluminescence , silicon , materials science , quantum dot , exciton , potential well , nanostructure , oscillator strength , radiative transfer , optoelectronics , raman spectroscopy , molecular physics , condensed matter physics , nanotechnology , physics , optics , spectral line , quantum mechanics
Visible photoluminescence (PL) from laser‐etched silicon nanostructures has been analysed. A systematic size dependence study of PL from silicon nanostructures has been performed. The PL from these structures is attributed to the quantum confinement effect. Different quantum confinement models have been used for PL and Raman lineshape fitting to calculate the mean size and size distribution of silicon nanostructures and the results are comparatively studied. Calculated values of oscillator strength and radiative lifetime show that PL is due to radiative recombination of confined excitons.