Open AccessReduction mechanisms for dislocation densities in GaN heteroepitaxy over Si substrate patterned with a serpentine channel structure
Author(s) -
Wang Kejia,
Wei Tiantian,
Song Yuzi,
Xie Yahong,
Hu Xiaodong,
Cheng Zhiyuan
Publication year - 2022
Publication title -
micro and nano letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.25
H-Index - 31
ISSN - 1750-0443
DOI - 10.1049/mna2.12145
Subject(s) - dislocation , materials science , reduction (mathematics) , substrate (aquarium) , channel (broadcasting) , optoelectronics , nanotechnology , composite material , computer science , telecommunications , geometry , geology , mathematics , oceanography
Heteroepitaxial growth of gallium nitride (GaN) over patterned Silicon (Si) substrates using serpentine channel structure was demonstrated and studied with transmission electron microscopy (TEM). Cross‐sectional TEM images showed that the dislocations were filtered out effectively, through two 90° turns in GaN growth front with the unique serpentine channel structure, resulting in high crystal quality GaN materials over the top mask layer. Dislocation behaviours at different parts of the structure were investigated to understand the mechanism of dislocation density reduction.