Graphene antidot nanoribbon tunnel field‐effect transistor | Zendy

Xiao Zhixing | Zendy

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Graphene antidot nanoribbon tunnel field‐effect transistor

Author(s) -

Xiao Zhixing

Publication year - 2022

Publication title -

micro and nano letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.25

H-Index - 31

ISSN - 1750-0443

DOI - 10.1049/mna2.12107

Subject(s) - graphene , materials science , field effect transistor , nanotechnology , tunnel field effect transistor , transistor , engineering physics , optoelectronics , condensed matter physics , electrical engineering , engineering , physics , voltage

A graphene nanoribbon tunnel field‐effect transistor (TFET) model is proposed, in which the antidot pattern is used to generate the heterojunction (HJ) band structure. The intrinsic strain at the HJ interface is absent naturally, greatly avoiding the tunnelling blocking effect of the interface states. The energy gap ( E g ) of the graphene antidot nanoribbon (GANR) can be flexibly modulated through the antidot morphology, resulting in highly tunable device performance. Moreover, the stability of the TFET behaviours considering the patterning technology issue is studied. Simulation results indicate that the GANR is suitable for the TFET design in different application scenarios.

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