Open AccessHigh‐efficiency broadband power amplifier design via ideal de‐embedding and direct compensation of GaN‐HEMTs parasitics
Author(s) -
Sayed Ahmed Sleem,
Ahmed Hesham Nabil,
Darwish Mohammad Magdi
Publication year - 2022
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/mia2.12250
Subject(s) - parasitic extraction , amplifier , high electron mobility transistor , electronic engineering , cascode , electrical engineering , transistor , broadband , engineering , telecommunications , voltage , cmos
In this work, a design approach for broadband high‐efficiency power amplifiers is presented. The proposed technique is based on deductive de‐embedding of the nonlinear parasitics of packaged GaN‐HEMT devices. A new transistor parasitics equivalent network is proposed that utilises a model‐based extraction flow. A simple two‐element compensation network is then used to accurately compensate the extracted nonlinear device parasitics; this enables optimum load resistance to be presented to the device current generator using a real‐to‐real matching network. In order to validate the proposed concept, a single‐ended Class‐AB power amplifier is designed and fabricated using a Wolfspeed 25‐W GaN HEMT ‘CGH40025F’ transistor. At a centre frequency of 2.35 GHz, a fractional bandwidth of 55% is achieved. The measured average drain efficiency and power gain of the designed power amplifier are 71% and 10.4 dB, respectively.