Open AccessTime‐domain signal and noise modelling and analysis of millimetre‐wave and THz high electron mobility transistors
Author(s) -
Mohammadzade Alireza,
Abdipour Abdolali,
Askarpour Amir N.
Publication year - 2021
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/mia2.12173
Subject(s) - transistor , high electron mobility transistor , noise (video) , physics , time domain , scattering parameters , computational physics , finite difference time domain method , terahertz radiation , electronic circuit simulation , transmission line , electronic engineering , acoustics , optoelectronics , engineering , optics , electrical engineering , computer science , electronic circuit , quantum mechanics , voltage , artificial intelligence , image (mathematics) , computer vision
Abstract This study presents the simultaneous signal and noise modelling and analysis of mm‐wave/THz high electron mobility transistors (HEMTs) in the linear regime as stochastic active multi‐conductor transmission lines (SAMTLs). For such devices, stochastic inhomogeneous telegrapher equations of SAMTLs are extracted assuming the domination of the quasi‐transverse electromagnetic mode. Analytical solutions for these equations do not exist. So a numerical analysis of such equations is introduced here at millimetre‐wave and terahertz frequencies. These equations are analysed with a numerical method in the time domain, namely the finite‐integration technique. A semi‐distributed model in the advanced design system commercial software is used to validate the numerical results. Also, the results of noise figure and scattering parameters (S‐parameters) for the metal–semiconductor field‐effect transistor transistor, which has the same SAMTLs model as the HEMT transistor, are compared with the measurement reports at microwave frequencies.