Open AccessA wideband high dynamic range triple‐stacked FET dual‐shunt distributed analogue voltage controlled attenuator
Author(s) -
Nguyen Duy P.,
Tran XuanTu,
Pham AnhVu
Publication year - 2021
Publication title -
iet microwaves, antennas and propagation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.555
H-Index - 69
eISSN - 1751-8733
pISSN - 1751-8725
DOI - 10.1049/mia2.12056
Subject(s) - attenuator (electronics) , wideband , dynamic range , gallium arsenide , chip , materials science , voltage , bandwidth (computing) , electrical engineering , electronic engineering , wide dynamic range , insertion loss , high dynamic range , optoelectronics , computer science , engineering , physics , attenuation , telecommunications , optics
The authors present a novel wideband two‐dimensional voltage‐controlled attenuator (VCA). The proposed design employs both stacked‐FET configuration and distributed structure to achieve wideband performance, high power, and high dynamic range simultaneously. A systematic design methodology is also illustrated along with a fabricated prototype to verify the concept. The chip fabricated in a 0.15‐μm Gallium Arsenide (GaAs) process exhibiting a measured power at 1‐dB compression ( P 1dB ) of 25.5 dBm with a corresponding dynamic range of 32 dB. The insertion loss ranges from 2 to 5 dB over the bandwidth from 2 to 40 GHz. Furthermore, the chip is not only very compact (0.84 mm 2 ), but it also requires only a single positive supply voltage, which makes it more appealing to highly integrated wireless applications.