Open AccessReliability evaluation of MMC system considering working conditions
Author(s) -
Zheng Tao,
Huang Meng,
Zhu Lingyi,
Zha Xiaoming
Publication year - 2019
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2018.8891
Subject(s) - insulated gate bipolar transistor , reliability (semiconductor) , junction temperature , modular design , reliability engineering , power (physics) , failure rate , voltage , computer science , key (lock) , process (computing) , power semiconductor device , bipolar junction transistor , materials science , transistor , electronic engineering , electrical engineering , engineering , physics , quantum mechanics , computer security , operating system
The reliability is a key issue of the high‐voltage high‐power modular multilevel converter (MMC) system due to the usage of fragile insulated gate bipolar transistor (IGBT) modules. In this study, it is proposed that the reliability of the MMC system can be modelled and calculated considering practical working conditions. Firstly, based on the MMC power level, the power loss and the junction temperature are analysed. Then considering the aging process of IGBT, the failure rate is calculated with temperature coefficient. Finally, the MMC system failure rate and its relationships with some key parameters are found.