Open AccessHigh step‐up three level boost converter with inverse characteristic
Author(s) -
Li Fei,
Ji Suyun,
Geng Ning,
Yang Jing,
Liang Shanshan,
Liu Lin,
Yue Zengwei,
Gao Peng,
Xue Qicheng,
Liu Xinghua,
Zhu Feng,
Sun Xuefeng,
Yao Yu
Publication year - 2018
Publication title -
the journal of engineering
Language(s) - English
Resource type - Journals
ISSN - 2051-3305
DOI - 10.1049/joe.2018.8347
Subject(s) - leakage inductance , boost converter , inductor , buck–boost converter , voltage , topology (electrical circuits) , converters , electronic engineering , ćuk converter , capacitor , inductance , high voltage , forward converter , computer science , electrical engineering , engineering
This paper presents a novel magnetically coupled dual switches three level dc–dc converter with high‐voltage boost and reduced power device voltage stress ability. The topology can achieve high‐voltage boost ability by using coupled inductor and low MOSFET voltage stress by using three‐level idea. However, unlike other high step‐up three level converters, its gain is increased by reducing turns ratio. The name inverse is used for representing the inverse proportion principle of the proposed converter. Aiming at existing leakage inductance, introduced diode and capacitor circuit not only absorbs the leakage energy but also further boosts the gain. In addition, the proposed converter only utilises one magnetic core. Operating principles and relevant theoretical analysis of the proposed converter are described. In order to verify the proposed converter's performance, the relevant experiment is performed.